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| AOU436 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU436 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU436 is Pb-free (meets ROHS & Sony 259 specifications). AOU436L is a Green Product ordering option. AOU436 and AOU436L are electrically identical. Features VDS (V) = 30V ID = 57A (VGS = 10V) RDS(ON) < 8.5m (VGS = 10V) RDS(ON) < 14m (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B, Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C Power Dissipation B TC=25C TC=100C TC=25C TC=100C B Maximum 30 20 57 40 100 30 143 50 25 -55 to 175 Units V V A A mJ W C ID IDM IAR EAR PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Steady-State Symbol RJA RJL Typ 100 2 Max 125 3 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU436 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 85 5.4 8.1 9.8 88 0.71 1 85 1520 VGS=0V, VDS=15V, f=100kHz VGS=0V, VDS=0V, f=1MHz 306 214 0.47 31.9 VGS=4.5V, VDS=15V, ID=20A 16.2 5 9.6 7 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s 11.6 24.2 7.7 23.8 15.7 30 0.7 39 20 1825 8.5 9.7 14 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 50 4V 20 ID (A) 3.5V ID(A) 40 30 20 25C 10 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics VDS=5V 125C 60 10 14 12 VGS=4.5V RDS(ON) (m) 10 8 VGS=10V 6 4 0 10 20 30 40 Normalized On-Resistance 1.8 ID=20A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 ID=20A 12 1.0E+02 1.0E+01 125C 1.0E+00 IS (A) 125C 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C RDS(ON) (m) 8 4 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOU436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID=20A Capacitance (pF) 2500 2000 Ciss 1500 1000 Coss Crss 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 1000.0 RDS(ON) limited 100.0 ID (Amps) 100 10s Power (W) 100s 80 TJ(Max)=175C TA=25C 10.0 TJ(Max)=175C TA=25C DC 1ms 60 1.0 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 40 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJc Normalized Transient Thermal Resistance D=Ton/T TJ,PK=Tc+PDM.ZJc.RJc RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 PD Ton T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current 50 40 30 20 10 0 0.00001 TA=25C 80 Power Dissipation (W) 0.01 tA = L ID BV - VDD 60 40 20 0 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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